Traditional AlGaN electron blocking layer (EBL) have significant limitations in reducing electron leakage and enhancing electron injection, especially in high-Al-content environments. This study presents an EBL that combines superlattice (SL) and multi-gradient structures, aiming to enhance the performance of DUV LEDs. Simulations were performed using the semiconductor device advanced physics model (APSYS) software, and comparisons were made with conventional high-Al content AlGaN EBL and SL EBL. The results indicate that the combination of SL and multi-gradient EBL significantly increases the electron barrier height, suppresses electron leakage, and enhances hole injection efficiency, leading to a 42.4% increase in internal quantum efficiency and a notable 341.6% increase in output power compared to reference LED structure. Simultaneously, significant improvements were observed in the radiative recombination rate and spontaneous emission rate, offering new insights for the design of high-performance devices in ultraviolet applications.