Near-diffraction-limited 561 nm laser based on a tapered integrated Nd:YAG/PPMgLN microchip
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1.Fujian Agriculture and Forestry University;2.Key Laboratory of Optoelectronic Science and Technology for Medicine of the Ministry of Education, Fujian Provincial Key Laboratory of Photonic Technology, College of Photonic and Electronic Engineering, Fujian Normal University, Fuzhou 350007, China;3.National Rare Earth Functional Material Innovation Center, Ganzhou, Jiangxi, 341100, PR China;4.The Smart Home Information Collection and Processing on Internet of Things Laboratory of Digital Fuian, Fujian Jiangxia University, Fuzhou, 350007, China;5.Fujian Normal University;6.CTL Photonics Inc

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This work has been supported partly by The Smart Home Information Collection, Processing on Internet of Things Laboratory of Digital Fujian, Fu-jian Jiangxia University (Grant No. JXKFB202401) , Youth Backbone Training Fund of Anxi Tea College, Fujian Agriculture and Forestry University (Grant No. ACKY2023021) , and the Open Research Fund of Guorui Kechuang Rare earth Functional Materials (Ganzhou) Co. Ltd (No. GRK-CXTGNCL2305)

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    Abstract:

    We report, for the first time, a near-diffraction-limited 561-nm laser based on an integrated tapered Nd:YAG/PPMgLN microchip. Under high-power diode pumping, the short cavity length leads to a large Fresnel number and promotes transverse multimode oscillation. To suppress higher-order transverse modes, the PPMgLN segment is tapered to reduce the effective area of the output end-face. The tapered geometry provides an aperture-like transverse-mode selection mechanism by introducing additional losses for unwanted modes, thereby enabling near-diffraction-limited intracavity second-harmonic generation. With a removed width of 880 μm at the output end-face, the laser achieves excellent beam quality with Mx² = 1.18 and My² = 1.13. In this optimized configuration, a maximum output power of 325 mW at 561 nm is obtained, together with a power fluctuation of only 0.18% over 3 h of continuous operation.

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History
  • Received:May 21,2026
  • Revised:July 13,2026
  • Adopted:August 18,2026
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